Improved Performance of Double Zr–Si Layer for Copper Metallization-Reference-Cited by-同舟云学术

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Improved Performance of Double Zr–Si Layer for Copper Metallization

Published:2010 Issue:4 Volume:13 Page:H128
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Wang Ying,Cao Fei,Zhang Mi-lin,Shao Lei,Li Xi-chuan

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference22 articles.

1. Improved Barrier and Adhesion Properties in Sputtered TaSiN Layer for Copper Interconnects

2. Properties of Copper Layers Deposited by Electroplating on an Agglomerated Copper Seed Layer

3. Control of the (111) Orientation in Copper Interconnection Layer

4. Electrochemical Cu Nanoparticle Deposition on TaSiN Diffusion Barrier Films

5. Atomic Layer Deposition of Molybdenum Nitride Thin Films for Cu Metallizations

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