Reactive Ion Etching of Tungsten Films Sputter Deposited on GaAs-Reference-Cited by-同舟云学术

Reactive Ion Etching of Tungsten Films Sputter Deposited on GaAs

Published:1985-12-01 Issue:12 Volume:132 Page:2980-2989
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Adachi Sadao¹²,Susa Nobuhiko¹²

Affiliation:

1. Nippon Telegraph and Telephone Corporation, Atsugi Electrical Communication Laboratories, Atsugi‐shi, Kanagawa 243‐01, Japan

2. Nippon Telegraph and Telephone Corporation, Musashino Electrical Communication Laboratories, Musashino‐shi, Tokyo 180, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2113707/pdf

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