Author:
Tanjyo Masayasu,Hamamoto Nariaki,Nagayama Tsutomu,Umisedo Sei,Koga Yuji,Maehara Noriaki,Une Hideyasu,Matsumoto Takao,Nagai Nobuo,Borland John O.
Abstract
Newly developed sweep beam Cluster ion implanter: CLARIS with 0.2-7keV energy range for Boron beam and 1-10keV energy range for Carbon beam is introduced. Novel Cluster ion implantation technology is capable for 45nm beyond device requiring USJ formation (<15nm) with high retain dose (>70%) and low sheet resistivity (<1200Ω/sq). Comparison of retain dose and sheet resistivity of B18, BF2, and B beams with FLA shows the superiority of the B18 implantation for less than 500eV implantation.
Publisher
The Electrochemical Society
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献