The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry-Reference-Cited by-同舟云学术

The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry

Published:2012 Issue:4 Volume:15 Page:H97
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Lu Hai-Sheng,Wang Jing-Xuan,Zeng Xu,Chen Fei,Zhang Xiao-Meng,Zhang Wen-Jun,Qu Xin-Ping

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference19 articles.

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3. Seedless Superfill: Copper Electrodeposition in Trenches with Ruthenium Barriers

4. Plasma-Enhanced Atomic Layer Deposition of Ru–TiN Thin Films for Copper Diffusion Barrier Metals

5. Ruthenium Polishing Using Potassium Periodate as the Oxidizer and Silica Abrasives

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