High Power Density UV Optical Stress for Quality Evaluation of 4H-SiC Epitaxial Layers
Author:
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering
Reference24 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. N. Karoda, K. Shibahara, W. S. Yoo, S. Nishino, and H. Matsunami , Extended Abstract, 19th Conference on Solid State Devices and Materials , Tokyo, 227 (1987).
3. Degradation of hexagonal silicon-carbide-based bipolar devices
4. Annealing effects on single Shockley faults in 4H-SiC
5. Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping
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