Ion‐Implantation and Activation of Aluminum in 6 H ‐ SiC-Reference-Cited by-同舟云学术

Ion‐Implantation and Activation of Aluminum in 6 H ‐ SiC

Published:1995-09-01 Issue:9 Volume:142 Page:L144-L146
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Flemish J. R.¹²³,Xie K.¹²³,Du H.¹²³,Withrow S. P.¹²³

Affiliation:

1. U.S. Army Research Laboratory, Electronics and Power Sources Directorate, Fort Monmouth, New Jersey 07703, USA

2. Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA

3. Oak Ridge National Laboratories, Oak Ridge, Tennessee 37831, USA

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2048727/pdf

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