Author:
Matsunaga S.,Yoshida S.,Kawaji T.,Inada T.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Gallium Nitride Films
2. Electrolytic Etching of GaN
3. Anodic Formation of Oxide Films on Silicon
4. Fundamentals of Silicon Integrated Device Technology, Vol. 1, R. M. Burger and R. P. Donovan, Editors, p. 55, Prentice Hall Inc., Englewood Cliffs, (1967).
5. Nitrogen implantation in (100)‐β‐SiC layers grown on Si substrate
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05
2. Dual-energy Si ion implantation in epitaxial GaN layers on AlN/Al2O3;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04
3. Electrical properties of n-type layers formed in GaN by Si implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01