Dual-energy Si ion implantation in epitaxial GaN layers on AlN/Al2O3-Reference-Cited by-同舟云学术

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Dual-energy Si ion implantation in epitaxial GaN layers on AlN/Al2O3

Published:2007-04 Issue:1-2 Volume:257 Page:320-323
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ozaki D.,Ebihara J.,Ohshima Y.,Takeuchi R.,Inada T.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Photoluminescence of ion‐implanted GaN

2. Annealing of ion implanted gallium nitride

3. J. P. Fellows, Electrical activation studies of ion implanted gallium nitride, PhD Thesis, Air Force Institute of Technology, November 2001.

4. n+-GaN formed by Si implantation intop-GaN

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and electrical characterizations of Si-implanted GaN with a high dose at elevated temperatures;Materials Science in Semiconductor Processing;2022-11

2. Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05

3. Effect of carbon incorporation on electrical properties of n-type GaN surfaces;Journal of Applied Physics;2009-01

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