Modified Surface Activated Bonding Using Si Intermediate Layer for Bonding and Debonding of Glass Substrates

Abstract

This study reports the bonding and debonding technology based on the Surface Activated Bonding method for the handling of the thin glass substrates. The glass substrates are bonded by The Si intermediate layer oh under 10 nm thick. From the XPS analysis, the OH groups are formed in the bonding interface and the Si layer’s surface is oxidized by the reaction with the OH groups and water at high temperature. Additionally the Si intermediate layer remains on the deposited glass surface. AFM observation also shows the smooth debonded surfaces. From these results, the debonding at the bonding interface is confirmed.