Evaluation of Properties of SiO2 Films Fabricated by Plasma Oxidation

Abstract

Properties of SiO2 films formed by plasma oxidation were compared with those of films formed by thermal oxidation. X-ray reflectivity (XRR) was used to evaluate the SiO2/Si interface roughness, thickness, and density of SiO2 films. Chemical properties of the SiO2 films were investigated by X-ray photoelectron spectroscopy (XPS). Moreover, the relation between film density and its chemical properties was evaluated. This evaluation shows that SiO2 films fabricated by plasma oxidation have higher density and a smoother interface than those fabricated by thermal oxidation. In addition, oxidation rate was increased and interface quality and density were improved by incorporating hydrogen in the plasma atmosphere.