Effects of Thermally Oxidized-SiN Gate Oxide on 4H-SiC Substrate-Reference-Cited by-同舟云学术

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Effects of Thermally Oxidized-SiN Gate Oxide on 4H-SiC Substrate

Published:2007 Issue:11 Volume:10 Page:H327
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Hyun Moon Jeong,Keun Song Ho,Hyuk Yim Jeong,Seok Seo Han,Sook Oh Myeong,Ho Lee Jong,Joon Kim Hyeong,Yew Cheong Kuan,Bahng Wook,Kim Nam-Kyun

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference18 articles.

1. Recent Advances in SiC Power Devices

2. Vital Issues for SiC Power Devices

3. Silicon Carbide High Frequency Devices

4. Intrinsic SiC/SiO2 Interface States

5. Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A study on N2O direct oxidation process with re-oxidation annealing for the improvement of interface properties in 4H-SiC MOS capacitor;Journal of the Korean Physical Society;2017-08

2. Improved 4H-SiC metal oxide semiconductor interface produced by using an oxidized SiN gate oxide that had undergone post-oxidation annealing;Journal of the Korean Physical Society;2014-05

3. Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide;Materials Science Forum;2010-04

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