Low Temperature Deposition of Ge Thin Films for Phase Change Memory-Reference-Cited by-同舟云学术

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Low Temperature Deposition of Ge Thin Films for Phase Change Memory

Published:2019-12-19 Issue:7 Volume:11 Page:269-278
ISSN:1938-6737
Container-title:ECS Transactions
language:
Short-container-title:ECS Trans.

Author:

Chen Tianniu,Xu Chongying,Hunks William,Stender Matthias,Stauf Gregory T.,Chen Philip S.,Roeder Jeffery F.

Publisher

The Electrochemical Society

Link

https://iopscience.iop.org/article/10.1149/1.2779090/pdf

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer deposition of chalcogenide thin films: processes, film properties, applications, and bibliometric prospect;Journal of Materials Research and Technology;2022-09

2. Developing Precursor Chemistry for Atomic Layer Deposition of High-Density, Conformal GeTe Films for Phase-Change Memory;Chemistry of Materials;2019-09-18

3. A germanium(II) aminopyridinato compound and its potential as a CVD precursor;Polyhedron;2017-09

4. Molecular Precursors for the Phase-Change Material Germanium-Antimony-Telluride, Ge2Sb2Te5(GST);Zeitschrift für anorganische und allgemeine Chemie;2017-08-29

5. Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol;Chemistry of Materials;2016-09-20

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