Dopants (P, As, and B) in the Polycrystalline Silicon/Titanium Silicide System: Redistribution and Activation-Reference-Cited by-同舟云学术

Dopants (P, As, and B) in the Polycrystalline Silicon/Titanium Silicide System: Redistribution and Activation

Published:1997-03-01 Issue:3 Volume:144 Page:1090-1095
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kalnitsky A.¹,Hurley P. K.²,Lepert A.¹

Affiliation:

1. Centre Commun CNET‐SGS‐Thomson, BP 16‐38921 Crolles Cedex, France

2. National Microelectronics Research Centre, University College Cork, Cork, Ireland

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837537/pdf

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