Degradation of Reactively Sputtered Ti‐Si‐N Films Used as a Barrier Layer in Titanium Silicide/Polycrystalline Si Gate Electrodes-Reference-Cited by-同舟云学术

Degradation of Reactively Sputtered Ti‐Si‐N Films Used as a Barrier Layer in Titanium Silicide/Polycrystalline Si Gate Electrodes

Published:1999-04-01 Issue:4 Volume:146 Page:1579-1582
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Park Ji‐Soo¹,Sohn Dong Kyun¹,Lee Byung Hak¹,Bae Jong‐Uk¹,Byun Jeong Soo¹,Park Jin Won¹

Affiliation:

1. LG Semicon Company, Limited, Process Team, Research and Development Division, Cheongju‐si 361-480, Korea

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1391808/pdf

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