3D Interconnect Process Integration and Characterization of Back Side Illuminated CMOS Image Sensor with 1.75 μm Pixels-Reference-Cited by-同舟云学术

3D Interconnect Process Integration and Characterization of Back Side Illuminated CMOS Image Sensor with 1.75 μm Pixels

Published:2009 Issue:6 Volume:156 Page:J143
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Pyo Sung Gyu,Park S. H.,Kim Sibum

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. B. Pain , inProceedings of the Workshop on CCD/AIS, p. 102 (2005).

2. B. Pain, C. Sun, P. Vo, B. Hancock, T. J. Cunningham, C. Wrigley, R. Toda, V. White, A. Banerjee, and D. Misra , inProceedings of the International Image Sensor Workshop, p. 158 (2007).

3. J. Prima, F. Roy, P. Coudrain, X. Gagnard, J. Segura, Y. Cazaux, D. Herault, N. Virollet, N. Moussy, B. Giffard, et al. , inProceedings of the International Image Sensor Workshop, p. 5 (2007).

4. Three-dimensional integrated circuits

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