Investigation of a Promising Chemical for BEOL Ultra Low K Cleaning of 28nm Node and Beyond
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Published:2014-02-27
Issue:1
Volume:60
Page:379-382
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Hu Chunzhou,Yuan Zhugen,Liu Huanxin,He Yonggen,Song Xinghua,Chen LinLin,Wu Jingang
Abstract
In this paper, novel cleaning chemical for BEOL dual damascene cleaning was evaluated. The cleaning performance mainly focus on electrical property of Cu interconnect and physical impact on dual damascene structure such as Cu erosion and TiN pullback profile. It’s found Cu erosion is well controlled by Cu inhibitor in the chemical, while TiN pullback amount can be controlled by H2O2 ratio, process time. The DIW rinse hard removability of the Cu-inhibitor and its impact on device reliability also discussed in this paper. This drawback can be fixed by low temperature anneal to decompose the Cu and inhibitor complex.
Publisher
The Electrochemical Society
Cited by
1 articles.
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