Accurate Determination of Dislocation Density in GaN Using Chemical Mechanical Polishing
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Dislocations and their reduction in GaN
2. Epitaxial lateral overgrowth techniques used in group III nitride epitaxy
3. X-ray diffraction analysis of the defect structure in epitaxial GaN
4. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
5. Wet etching of GaN, AlN, and SiC: a review
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1. Mechanism of Electrochemically Assisted Friction and Wear Behavior of GaN in KMnO4 Slurry;ECS Journal of Solid State Science and Technology;2023-07-01
2. Effect of the plasma experimental parameters on the dose and profiles of hydrogen in-diffused into the GaN/AlGaN/GaN/Si high electron mobility transistor;Materials Science and Engineering: B;2023-04
3. Study on Electrochemical Corrosion and CMP of GaN in Different Oxidation Systems;ECS Journal of Solid State Science and Technology;2022-03-01
4. Chemical and physical mechanisms of CMP of gallium nitride;Advances in Chemical Mechanical Planarization (CMP);2022
5. Effects of Chemical-Electrical and Mechanical Parameters on Electrical-induced Chemical Mechanical Polishing of GaN;ECS Journal of Solid State Science and Technology;2021-12-01
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