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Removal of Plasma-Modified Low-k Layer Using Dilute HF: Influence of Concentration

  • Published:2005 Issue:7 Volume:8 Page:F21
  • ISSN:1099-0062
  • Container-title:Electrochemical and Solid-State Letters
  • language:en
  • Short-container-title:Electrochem. Solid-State Lett.

Author:

Le Quoc Toan,Baklanov M. R.,Kesters E.,Azioune A.,Struyf H.,Boullart W.,Pireaux J.-J.,Vanhaelemeersch S.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Cited by 42 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma Induced Damage Reduction of Ultra Low-k Dielectric by Using Source Pulsed Plasma Etching for Next BEOL Interconnect Manufacturing;IEEE Transactions on Semiconductor Manufacturing;2020-05

2. BEOL Post-Etch Clean Robustness Improvement with Ultra-Diluted Hf for 28nm Node;Solid State Phenomena;2018-08

3. Selective dry etching of silicon containing anti-reflective coating;Advanced Etch Technology for Nanopatterning VII;2018-03-20

4. Study of CO2 ashing for porous SiOCH film using 100 MHz/13.56 MHz dual frequency superimposed capacitive coupled plasma;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-11

5. Mechanisms for plasma cryogenic etching of porous materials;Applied Physics Letters;2017-10-23
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