Study on Analog/RF and Linearity Performance of Staggered Heterojunction Gate Stack Tunnel FET
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ac0e10/pdf
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5. Effect of strain in silicon nanotube FET devices for low power applications;Singh;Eur. Phys. J. Appl. Phys.,2019
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