Abstract
We have investigated the temperature dependence of nonradiative transitions of an optical ion in a solid from the excited electronic state to the ground electronic state within the framework of proper adiabatic approximation for a single configuration coordinate,
q
.
The Hamiltonian based on the nonadiabaticity operator has been used to calculate the temperature dependence of nonradiative transition rates. This perturbing Hamiltonian,
H
na
=
−
ℏ
2
∂
∂
q
e
∂
∂
q
v
−
ℏ
2
2
∂
2
∂
q
2
e
I
v
consists of two terms. In the literature, the first term is usually used to explain nonradiative transitions of an optical ion in a solid. We have shown that the first term alone leads to a zero of the nonradiative transition rates when
s
=
z
for low temperature, where
s
represents the Huang-Rhys parameter and
z
relates to the energy gap between the excited state and ground state in terms of vibrational quantum of energy,
ℏ
ω
.
This zero cannot be removed unless the second term is included for calculating the transition rates. We have defined three auxiliary functions,
U
1
,
U
2
and
U
3
to describe the temperature dependence of the nonradiative transition rates in a physically meaningful way.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials