Damage-Free Transfer of GaN-Based Light-Emitting Devices and Reuse of Sapphire Substrate-Reference-Cited by-同舟云学术

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Damage-Free Transfer of GaN-Based Light-Emitting Devices and Reuse of Sapphire Substrate

Published:2020-08-10 Issue:6 Volume:9 Page:065019
ISSN:2162-8777
Container-title:ECS Journal of Solid State Science and Technology
language:
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Zhang Baoguo,Luo Chao,Li Yun-Fei^ORCID

Funder

Science & Technology Planned Project, Hebei Province of China

Hundred Talent Project of Hebei Province of China

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/2162-8777/aba7fc/pdf

Reference24 articles.

1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution”

4. Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of temperature-dependent photoluminescence of GaN epilayer by artificial neural network;Journal of the Australian Ceramic Society;2023-06-22

2. Vertical full-colour micro-LEDs via 2D materials-based layer transfer;Nature;2023-02-01

3. Designing an Ultrathin Film Spectrometer Based on III-Nitride Light-Absorbing Nanostructures;Micromachines;2021-06-28

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