Abstract
A new reliable, simple, inexpensive experimental setup was built to bond silicon (Si)-glass by anodic bonding under atmospheric conditions. Anodic bonding of silicon-glass samples was carried out using a custom in-house-built inexpensive setup. The bonding tensile strength test confirmed that anodic bonding strongly depends on both the bonding temperature and the bonding voltage. The bonding tensile strength was found to be 1134 × 104 Nm−2 at a temperature of 420 °C and an applied voltage of 800 V. It has also been concluded from this study that to achieve reasonable bond-tensile strength, the typical temperature and voltage to bond Si-Glass is 385 °C and 700 V, respectively.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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