Influence of Scavenger on Abrasive Stability Enhancement and Chemical and Mechanical Properties for Tungsten-Film Chemical- Mechanical-Planarization
Author:
Funder
Ministry of Trade, Industry and Energy
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ab9fe5/pdf
Reference30 articles.
1. Studies on passivation behavior of tungsten in application to chemical mechanical polishing
2. Effects of oxidants on the removal of tungsten in CMP process
3. Chemical mechanical polishing and electrochemical characteristics of tungsten using mixed oxidizers with hydrogen peroxide and ferric nitrate
4. W-CMP for sub-micron inverse metallisation
5. Electrical performances of low resistive W buried gate using B2H6-reduced W nucleation layer technology for 30nm-based DRAM devices
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3. Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate;Nanomaterials;2022-11-04
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