Proton Irradiation in Simplified PERC Silicon Solar Cells: A Simulation-Based Framework

Abstract

A complete technological computer aided design (TCAD) based framework to study the proton radiation effects in silicon Passivated Emitter and Rear solar Cell (PERC) is presented. This novel approach combines the capabilities of the Radiation Effects Module (REM) in Silvaco device simulator with the vacancy information extracted from SRIM code. It is the first time that the parameters in both the tools are linked together to study the radiation effects without relying on previous experiments, which would not be possible if REM alone is used. The fluence levels used to study the radiation effects are present in the space environment but are well beyond the capabilities of laboratory settings. A simplified PERC solar cell is modeled where the average percentage difference between simulated and experimental parameters is <0.25%. The model is used for irradiation studies by the incident protons through Non-Ionizing Energy Loss (NIEL). The results agree well with experimentally studied maximum displacement damage results. It is found that the external quantum efficiency loss in the infrared region is primarily responsible for the overall efficiency degradation due to irradiation. Through this, the qualification of radiation hardness is possible, thereby opening new avenues to explore new radiation tolerant solar cell structures.