Quality of Signal Improvement in Prominent CNTFET Based Ternary Logic System for Futuristic Dielectric Inserted MLGNRs for Integrated Circuit Designs

Author:

Deepthi GurijalaORCID,Tatineni Madhavi

Abstract

Booming VLSI technology has graciously facilitated down-scaling dimensions of on-chip devices and interconnects in integrated circuits (ICs) to nano-miniaturized scale. However, at nano-dimensions where added benefits of scaling are constrained by associated highly-dense on-chip nano-interconnect structures, their electro-migration effects and several limiting signal-integrity issues. These cumulatively affect the quality of signal (QoS) at output. Improving output QoS is essential for attaining faithful system performance. The present paper judiciously attempts to address as well as limit this graving issue and is successfully proven by obtained results. Firstly, different structures and their performance of futuristic graphene based multi-layer graphene nano ribbon (MLGNR) interconnect is investigated. These include basic MLGNR and dielectric inserted side contact MLGNR (DS-MLGNR). Secondly, to improve data rates and performance, efficient and novel carbon nanotube field effect transistors (CNTFETs) based ternary logic system is incorporated for the prominent nano-MLGNR interconnects. Thirdly, QoS enhancement of highly potential DS-MLGNR interconnect is proposed using active shielding technique. Finally, is chase to further enrich QoS, adaptive least mean square (LMS) equalization technique is used at the receiver. The proposed work comprising of futuristic novel graphene interconnects with efficient ternary logic system together with adaption of several QoS improvement techniques are magnificent and panacea solution to limiting nano-interconnects in advanced ICs. Several interesting and seminal analyses such as delay, power, power-delay product, crosstalk, eye-diagram are performed that supports the novelty and effectiveness of the proposed work. The vivid performance analyses have been implemented at nano-size 10 nm technology node.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

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