Abstract
Top-contact pentacene-based organic thin-film transistor (OTFT) with a rubrene interlayer in between pentacene-electrode [Al, Au] interface is reported. A study of the interlayer behavior of rubrene shows enhanced device performance of OTFT than that of the conventional OTFTs with only metal source-drain electrodes [Al, Au]. The improved performances of the device are attributed to the smoother pentacene surface for high carrier injection and mobility and decrease in contact resistance of the device. The device with a rubrene interlayer in between pentacene/Au interface shows better field-effect mobility of 3.3 cm2 v−1 s−1, On/Off ratio of 1.22 × 107, the threshold voltage of −3.8 V, and sub-threshold-slope of 0.31 V decade−1 respectively.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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