Abstract
Compared with Sb film, V2O5/Sb superlattice-like thin film has better thermal stability (T
c
∼ 240 °C, T
10-year ∼ 172.9 °C). V2O5/Sb thin film is suppressed by the multiple interfaces and the grains become smaller. The vibrational peaks of Sb-Sb and V–O bonds are observed by Raman measurement. The interaction between the two crystal systems improves the stability of the V2O5/Sb membrane. The multilayer structures before and after crystallization were observed by transmission electron microscopy. The ultralow-power (2.25 × 10−12 J) and ultrafast-speed (8 ns) has been achieved for V2O5(1 nm)/Sb(9 nm)-based phase change memory device.
Funder
National Natural Science Foundation of China
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
6 articles.
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