Low Temperature Etching of Silylated Resist in an Oxygen Plasma Generated by an Electron Cyclotron Resonance Source-Reference-Cited by-同舟云学术

Low Temperature Etching of Silylated Resist in an Oxygen Plasma Generated by an Electron Cyclotron Resonance Source

Published:1993-12-01 Issue:12 Volume:140 Page:3620-3623
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Sung K. T.¹²,Juan W. H.¹²,Pang S. W.¹²,Horn M. W.¹²

Affiliation:

1. Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122

2. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173‐9108

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2221137/pdf

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1. Fabrication of magnetic recording heads and dry etching of head materials;IBM Journal of Research and Development;1999-01

2. Anisotropic Etching of a Novalak‐Based Polymer at Cryogenic Temperature;Journal of The Electrochemical Society;1997-03-01

3. Relating electric field distribution of an electron cyclotron resonance cavity to dry etching characteristics;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-07

4. Response surface study of resist etching in high density oxygen plasma and interactions of O2 plasma with NiFe, Cu, Ta, and Al2O3;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-05