A Chemical Etching for the Delineation of Oxidation Stacking Faults in Silicon Implanted with Oxygen Structures-Reference-Cited by-同舟云学术

A Chemical Etching for the Delineation of Oxidation Stacking Faults in Silicon Implanted with Oxygen Structures

Published:1991-09-01 Issue:9 Volume:138 Page:2752-2755
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Tsamis C.¹²³⁴,Tsoukalas D.¹²³⁴,Guillemot N.¹²³⁴,Stoemenos J.¹²³⁴,Margail J.¹²³⁴

Affiliation:

1. NCSR “Democritos,” Institute of Microelectronics, 15310 Aghia, Paraskevi, Greece

2. Laboratoire de Physique des Composants a Semiconducteurs, URA 840 CNRS, ENSERG, BP 257, 38016 Grenoble Cedex, France

3. Department of Physics, University of Thessaloniki, 54006 Thessaloniki, Greece

4. LETI, Centre d'Etudes Nucleaires de Grenoble, 38041 Grenoble Cedex, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086049/pdf

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