Etch‐Stop Behavior of Buried Layers Formed by Substoichiometric Nitrogen Ion Implantation into Silicon-Reference-Cited by-同舟云学术

Etch‐Stop Behavior of Buried Layers Formed by Substoichiometric Nitrogen Ion Implantation into Silicon

Published:1996-03-01 Issue:3 Volume:143 Page:1026-1033
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Pérez‐Rodríguez A.¹²³,Romano‐Rodríguez A.¹²³,Morante J. R.¹²³,Acero M. C.¹²³,Esteve J.¹²³,Montserrat J.¹²³,El‐Hassani A.¹²³

Affiliation:

1. EME, Departimento de Física Aplicada i Electrònica, Universitat de Barcelona, E‐08028 Barcelona, Spain

2. Centre Nacional de Microelectrònica, CSIC, Campus U.A.B., E‐08193 Bellaterra, Spain

3. Department of Physics, University Moulay Ismail, Zaitoun, Meknes, Morocco

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1836576/pdf

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