An Investigation of the Gas Phase and Surface Chemistry Active During the PECVD of nc-Silicon: A Detailed Model of the Gas Phase and Surface Chemistry
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Published:2009-09-25
Issue:8
Volume:25
Page:107-114
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Cavallotti Carlo,Rondanini Maurizio,Moiseev Tamara,Chrastina Danny,Isella Giovanni
Abstract
In this work we present a detailed model that is able to describe the elementary chemistry active in the gas phase and on the surface during the plasma deposition of nc-Silicon films. The model is validated by comparison with mass spectrometry data measured in situ in a low energy PECVD plasma reactor. It was found that the main growth precursors are SiH3, SiH2 and SiH radicals, with the more dehydrogenated radicals becoming dominant at high hydrogen dilution, and that during the film growth more than 90% of the surface is covered by hydrogen.
Publisher
The Electrochemical Society
Cited by
1 articles.
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