3C-SiC Films Grown on Si(111) Substrates as a Template for Graphene Epitaxy

Abstract

High quality (111) oriented SiC films were grown Si(111 substrates using a low temperature halogen-based process. The goal of this work was to produce SiC films with a high crystal quality and very low surface roughness for subsequent epitaxial growth of graphene films. SiC films with narrow x-ray diffraction peak widths and surface roughnesses less than 1nm were grown while avoiding common processing defects such as voids at the substrate-film interface.