Author:
Arai Hideaki,Kamimura Hideyuki,Sato Soshi,Kakushima Kuniyuki,Ahmet Parhat,Tsutsui Kazuo,Sugii Nobuyuki,Natori Kenji,Hattori Takeo,Iwai Hiroshi
Abstract
Silicidation of Si Nanowires (Si NWs) has been investigated in terms of the encroachment length of Ni silicide from the edge of exposed Si NWs. Ni silicides were formed by the reaction of Si NW and Ni layer by low temperature RTA processes.We also investigate Ni silicidation of Si NW using 2step annealing process. The encroachment length of Ni silicide is dramatically suppressed for the 2 step annealing process.
Publisher
The Electrochemical Society
Cited by
11 articles.
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