Substrate Impurity Migration during Rapid Thermal Annealing of Si Implanted GaAs-Reference-Cited by-同舟云学术

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Substrate Impurity Migration during Rapid Thermal Annealing of Si Implanted GaAs

Published:1987-10-01 Issue:10 Volume:134 Page:2596-2599
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kanber H.¹²,Whelan J. M.¹²

Affiliation:

1. Hughes Aircraft Company, Torrance Research Center, Torrance, California 90509

2. Department of Materials Science, University of Southern California, Los Angeles, California 90089

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2100249/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997

2. Ion Implantation Induced Extended Defects in GaAs;Handbook of Compound Semiconductors;1995

3. MeV Implantation of Gallium Arsenide;MRS Proceedings;1989

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