Properties of Polycrystalline Si[sub 1−x]Ge[sub x] Films Grown by Ultrahigh Vacuum CVD Using Si[sub 2]H[sub 6] and GeH[sub 4]-Reference-Cited by-同舟云学术

Properties of Polycrystalline Si[sub 1−x]Ge[sub x] Films Grown by Ultrahigh Vacuum CVD Using Si[sub 2]H[sub 6] and GeH[sub 4]

Published:2003 Issue:3 Volume:150 Page:G167
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kang S.-K.,Kim J. J.,Ko D.-H.,Kang H. B.,Yang C. W.,Ahn T. H.,Yeo I. S.,Lee T. W.,Lee Y. H.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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