Gate inversion effect in Si1−xGex∕HfO2∕Si metal-oxide-semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1946919
Reference11 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
3. Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates
4. Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics
5. Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Structural, electronics and optical properties of CaO;Journal of Physics: Conference Series;2008-03-01
2. CaO first-principles electronic properties and MOS device simulation;Journal of Physics D: Applied Physics;2007-03-02
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