Shallow and Thermally Stable Ohmic Contacts to p-InAsP-Reference-Cited by-同舟云学术

Shallow and Thermally Stable Ohmic Contacts to p-InAsP

Published:2006 Issue:5 Volume:153 Page:G479
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Wang S. H.,Lysczek E. M.,Liu Bangzhi,Robinson J. A.,Mohney S. E.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. S. Thomas III, K. Elliott, D. H. Chow, R. Rajavel, P. Deelman, D. McLaughlin, Y. Boegeman, and C. H. Fields ,International Semiconductor Device Research Symposium, Dec 10–12, 2003, p. 344.

2. S. Thomas III, A. Arthur, K. Elliott, C. H. Chow, P. Brewer, R. Rajavel, B. Shi, P. Deelman, C. H. Fields, and M. Madhav ,International Symposium on Compound Semiconductors, Aug 25–27, 2003, p. 177.

3. S. Thomas III, K. Elliott, D. H. Chow, B. Shi, P. Deelman, P. Brewer, A. Arthur, R. Rajavel, C. H. Fields, and M. Madhav ,International Conference on Indium Phosphide and Related Materials, May 12–16, 2003, p. 26.

4. Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts top‐InAs induced by rapid thermal processing

5. Shallow ohmic contacts to p-type InAs

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