Etch‐Induced Physical Damage and Contamination during Highly Selective Oxide Etching Using C 4 F 8 / H 2 Helicon Wave Plasmas-Reference-Cited by-同舟云学术

Etch‐Induced Physical Damage and Contamination during Highly Selective Oxide Etching Using C 4 F 8 / H 2 Helicon Wave Plasmas

Published:1999-04-01 Issue:4 Volume:146 Page:1517-1522
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kim Hyeon‐Soo¹,Lee Weon‐Jeong¹,Yeom Geun‐Young¹,Kim Jung‐Hun²,Whang Ki‐Woong²

Affiliation:

1. Department of Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea

2. Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1391797/pdf

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