Fluorocarbon plasma etching of silicon: Factors controlling etch rate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1736321
Reference20 articles.
1. Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanisms
2. Silicon etching mechanisms in a CF4/H2glow discharge
3. High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer
4. Fluorocarbon-based plasma etching of SiO[sub 2]: Comparison of C[sub 4]F[sub 6]/Ar and C[sub 4]F[sub 8]/Ar discharges
5. Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
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