Buried Cobalt Silicide Layers in Silicon Created by Wafer Bonding-Reference-Cited by-同舟云学术

Buried Cobalt Silicide Layers in Silicon Created by Wafer Bonding

Published:1994-10-01 Issue:10 Volume:141 Page:2829-2833
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Ljungberg Karin¹²³,Söderbärg Anders¹²³,Tiensuu Anna‐Lisa¹²³,Johansson Stefan¹²³,Thungström Göran¹²³,Petersson C. Sture¹²³

Affiliation:

1. Department of Technology, Electronics, Uppsala University, S‐751 21 Uppsala, Sweden

2. Department of Technology, Materials Science, Uppsala University, S‐751 21 Uppsala, Sweden

3. Solid‐State Electronics, The Royal Institute of Technology, Electrum, S‐164 28 Kista, Sweden

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2059239/pdf

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