Voltage-Regulating Properties of Al[sub x]Ti[sub 1−x]O[sub y] Films Exhibiting an Abrupt Current Jump-Reference-Cited by-同舟云学术

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Voltage-Regulating Properties of Al[sub x]Ti[sub 1−x]O[sub y] Films Exhibiting an Abrupt Current Jump

Published:2008 Issue:11 Volume:11 Page:G55
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Lim Jung Wook,Yun Sun Jin,Shim Jae Yeob,Kim Hyun Tak

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference19 articles.

1. Mott transition field effect transistor

2. Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor

3. Universality and Critical Behavior at the Mott Transition

4. A first-order Mott transition in LixCoO2

5. Observation of abrupt first-order metal–insulator transition in Be-doped GaAs

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