Observation of abrupt first-order metal–insulator transition in Be-doped GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Metal–Insulator Transition;Mott,1990
2. Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices
3. Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices
4. Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition
5. Strong nonlinear current–voltage behaviour in perovskite-derivative calcium copper titanate
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1. Voltage-induced Current-jump Assisted by Infrared or Temperature in p-type GaAs;Journal of the Korean Physical Society;2010-12-15
2. Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor;Applied Physics Letters;2009-12-07
3. Charge transport diagnosis by: I–V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers;Applied Surface Science;2008-08
4. Voltage-Regulating Properties of Al[sub x]Ti[sub 1−x]O[sub y] Films Exhibiting an Abrupt Current Jump;Electrochemical and Solid-State Letters;2008
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