Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal-Reference-Cited by-同舟云学术

Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal

Published:2014 Issue:5 Volume:3 Page:P122-P125
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Wu Chien-Ting,Lee Yao-Jen,Hsueh Fu-Kuo,Sung Po-Jung,Cho Ta-Chun,Current Michael Ira,Chao Tien-Sheng

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

2. Ni- and Co-based silicides for advanced CMOS applications

3. Lee Y.-J. Yu-Lun L. Fu-Kuo H. Kuo-Chin H. Chia-Chen W. Tz-Yen C. Ming-Hung H. Kowalski J. M. Kowalski J. E. Dawei H. Hsi-Ta C. Yiming L. Tien-Sheng C. Ching-Yi W. Fu-Liang Y. , presented at the IEEE International Electron Devices Meeting (2009).

4. Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation

5. Mechanisms for nonthermal effects on ionic mobility during microwave processing of crystalline solids

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3. Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing;Nanoscale Research Letters;2019-02-11