The Role Played in the Improvement of the SiO2/SiC Interface by a Thin SiO2 Film Thermally Grown Prior to Oxide Film Deposition-Reference-Cited by-同舟云学术

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The Role Played in the Improvement of the SiO2/SiC Interface by a Thin SiO2 Film Thermally Grown Prior to Oxide Film Deposition

Published:2012-11-06 Issue:1 Volume:2 Page:P8-P10
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Pitthan E.,Palmieri R.,Correa S. A.,Soares G. V.,Boudinov H. I.,Stedile F. C.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fermi-level pinning at metal/4H-SiC contact induced by SiC x O y interlayer;Japanese Journal of Applied Physics;2020-02-28

2. Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation;Journal of Applied Physics;2017-12-07

3. Investigation of phosphorous in thin films using the 31 P(α,p) 34 S nuclear reaction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-03

4. SiC Nitridation by NH3 Annealing and Its Effects in MOS Capacitors with Deposited SiO2 Films;Journal of Electronic Materials;2015-04-11

5. Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-08

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