Diffusion and Electrical Behavior of Al Implanted into Capped Si-Reference-Cited by-同舟云学术

Diffusion and Electrical Behavior of Al Implanted into Capped Si

Published:1993-07-01 Issue:7 Volume:140 Page:2057-2062
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Scandurra A.¹²³⁴⁵,Galvagno G.¹²³⁴⁵,Raineri V.¹²³⁴⁵,Frisina F.¹²³⁴⁵,Torrisi A.¹²³⁴⁵

Affiliation:

1. Consorzio Catania Ricerche, 95125 Catania, Italy

2. Istituto di Metodologie e Tecnologie per la Microelettronica‐CNR, 95129 Catania, Italy

3. Dipartimento di Fisica, Universitá di Catania, 95129 Catania, Italy

4. ST‐Microelectronics, 95100 Catania, Italy

5. Dipartimento di Scienze Chimiche, Universitá di Catania, 95125 Catania, Italy

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2220763/pdf

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dopants;Computational Microelectronics;2004

2. A complementary bipolar technology family with a Vertically Integrated PNP for high-frequency analog applications;IEEE Transactions on Electron Devices;2001

3. Thermal Oxidation of High Dose Aluminum Implanted Silicon;Journal of The Electrochemical Society;2000

4. Transistors, Bipolar Junction;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

5. Ion implantation and diffusion of Al in a system;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-08