Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices-Reference-Cited by-同舟云学术

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Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices

Published:2017 Issue:9 Volume:6 Page:P626-P632
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Liang Jianbo,Furuna Katsuya,Matsubara Moeko,Dhamrin Marwan,Nishio Yoshitaka,Shigekawa Naoteru

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Recent developments in ohmic contacts for III–V compound semiconductors

2. Sze S. M. Ng K. K. , Physics of Semiconductor Devices, p. 188, John Wiley & Sons, New Jersey (2007).

3. Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts

4. Thickness-dependent electrical conductivities and ohmic contacts in transition metal dichalcogenides multilayers

5. Surface activated bonding of silicon wafers at room temperature

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-loss characteristics of coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates;Japanese Journal of Applied Physics;2022-04-20

2. Low-temperature bonding of surface-activated polyimide to Cu Foil in Pt-catalyzed formic acid atmosphere;Journal of Materials Science: Materials in Electronics;2021-12-01

3. Nanostructural Analysis of Al/β-Ga2O3 Interface Fabricated Using Surface Activated Bonding;2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D);2021-10-05

4. Low-Loss Characteristics of Metal-Foil-Based Passive Components by Surface-Activated Bonding Technologies;IEEE Transactions on Electron Devices;2019-09

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