Abstract
The properties and materials selection of high dielectric constant oxides and metals for advanced CMOS FETs are reviewed. The basic problems of high K oxides and metal gate stacks have been implemented in practical devices by a number of industrial groups. The control of the FET gate threshold voltage and its effective work function has been difficult to achieve. Atomistic models of factors affecting the effective work function are described.
Publisher
The Electrochemical Society
Cited by
6 articles.
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