The Influence of Vicinal-Cut Sapphire Substrate on AlGaN/GaN Heterostructure by MOCVD-Reference-Cited by-同舟云学术

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The Influence of Vicinal-Cut Sapphire Substrate on AlGaN/GaN Heterostructure by MOCVD

Published:2008 Issue:6 Volume:155 Page:H369
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Chang Ping-Chuan,Yu Chia-Lin

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates

2. Effect of Surface Electronic States of p-Type GaN on the Blue-Light-Emitting Diodes

3. High-Detectivity GaN MSM Photodetectors with Low-Temperature GaN Cap Layers and Ir∕Pt Contact Electrodes

4. Comparison of Al[sub 0.32]Ga[sub 0.68]N∕GaN Heterostructure Field-Effect Transistors with Different Channel Thicknesses

5. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dislocation reduction mechanism os GaN films on vicinal sapphire substrates;Acta Physica Sinica;2023

2. AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric;Solid-State Electronics;2012-06

3. Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire;Superlattices and Microstructures;2009-12

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