Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire-Reference-Cited by-同舟云学术

Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire

Published:2009-12 Issue:6 Volume:46 Page:812-816
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Hu Weiguo,Ma Bei,Li Dabing,Narukawa Mitsuhisa,Miyake Hideto,Hiramatsu Kazumasa

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference16 articles.

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4. Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy

5. Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates

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