Epitaxial Growth of SiC on Sapphire Substrates with an AlN Buffer Layer-Reference-Cited by-同舟云学术

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Epitaxial Growth of SiC on Sapphire Substrates with an AlN Buffer Layer

Published:1994-02-01 Issue:2 Volume:141 Page:510-513
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Sywe B. S.¹²,Yu Z. J.¹²,Burckhard S.¹²,Edgar J. H.¹²,Chaudhuri J.¹²

Affiliation:

1. Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506

2. Department of Mechanical Engineering, The Wichita State University, Wichita, Kansas 67208

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2054756/pdf

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new method for Synthesis of Epitaxial Films of Silicon Carbide on Sapphire Substrates (α-Al2O3);REVIEWS ON ADVANCED MATERIALS SCIENCE;2018-06-01

2. Synthesis of α-SiC particles at 1200°C by microwave heating;Powder Technology;2013-10

3. Heteroepitaxy between wurtzite and corundum materials;Journal of Applied Physics;2013-05-14

4. CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC;Journal of Crystal Growth;2013-03

5. ChemInform Abstract: Epitaxial Growth of SiC on Sapphire Substrates with an AlN Buffer Layer.;ChemInform;2010-08-19

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